Laser annealing device

  • Inventors:
  • Assignees: Nec Corp
  • Publication Date: February 12, 1982
  • Publication Number: JP-S5726445-A


PURPOSE:To simplify the steps of manufacturing an electronic device by emitting a laser light via an optical mask and contracting and projecting a transparent pattern at the prescribed ratio, thereby eliminating a photolithography. CONSTITUTION:Single lateral mode Q switch pulse light of an Nd:YAG laser is condensed via a lens 2, and is emitted from the end via an optical fiber 3. The light is condensed via lens systems 4a-4c, the transparent pattern of an optical mask 6 is contracted to emit the light to a specimen 7, and the specimen 7 is annealed. A base 8 is synchronized with the Q switch of a laser oscillator 1, and the specimen is annealed by pulse while stepwisely feeding the base via a drive unit 9. According to this configuration, local heat treatment and chemical reaction treatment can be performed in two dimensions without photolithography.




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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5372575-AJune 28, 1978Thomson CsfPattern transfer optical device

NO-Patent Citations (0)


Cited By (2)

    Publication numberPublication dateAssigneeTitle
    JP-H01259530-AOctober 17, 1989Tokyo Electron LtdProcessing apparatus
    US-6680460-B1January 20, 2004Nec Corporation, Sumitomo Heavy Industries, Ltd.Apparatus for producing a semiconductor thin film