Josephson element

  • Inventors: SASAKI NOBUO
  • Assignees: Fujitsu Ltd
  • Publication Date: July 01, 1982
  • Publication Number: JP-S57106186-A


PURPOSE:To obtain a lateral MOS transistor type Josephson element by a thick insulating film by oppositely arranging a superconductive layer onto a substrate through an insulating layer and switching a constantly conductive condition and a super conductive condition by a controlling conductor disposed onto the insulating layer. CONSTITUTION:In 24 is evaporated onto the substrate 22, and coated with an SiO2 film 26. A window 28 is opened to the superconductive metal In film 24 and the SiO2 film 26, and the insulating film 30 is formed onto an inner circumferential surface and the bottom of the window 28 through thermal oxidation. The film corresponds to a gate insulating film of an MOS transistor, and a gate electrode 32 is shaped onto the film. The Josephson element forms the MOS transistor while using the superconductors 24a, 24b at both sides of the gate electrode 32 as a source and a drain. Accordingly, the comparatively thick insulating film 5 Josephson element with approximately 700Angstrom is obtained, and the element can be integrated to a high degree.




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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5220773-AFebruary 16, 1977Shinji KawamichiSemi-conductor element

NO-Patent Citations (0)


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    EP-0181191-A2May 14, 1986Hitachi, Ltd.Supraleiteranordnung
    EP-0305167-A2March 01, 1989Semiconductor Energy Laboratory Co., Ltd.Dispositifs électroniques utilisant des matériaux supraconducteurs
    JP-S6212212-AJanuary 21, 1987Hitachi LtdSuperconduction circuit
    US-4843446-AJune 27, 1989Hitachi, Ltd.Superconducting photodetector
    US-5012303-AApril 30, 1991Fujitsu LimitedSuperconducting device
    US-5126315-AJune 30, 1992Hitachi, Ltd.High tc superconducting device with weak link between two superconducting electrodes
    US-5126801-AJune 30, 1992Hitachi, Ltd.Superconducting device
    US-5272358-ADecember 21, 1993Hitachi, Ltd.Superconducting device
    US-5311036-AMay 10, 1994Hitachi, LtdSuperconducting device
    US-5552375-ASeptember 03, 1996Hitachi, Ltd.Method for forming high Tc superconducting devices
    US-6069369-AMay 30, 2000Hitachi, Ltd.Superconducting device