PURPOSE: To obtain a photoreceptor of good spectral sensitivity, and superior heat resistance and printing resistance by providing a charge transfer layer by As 2 Se 3 on a conductive substrate and a charge generating layer of the composition of xAs 2 Se 3 -yAs 2 Te 3 of x, y in a specific range threeon.
CONSTITUTION: An As 2 Se 3 layer 3 of 178°C glass transition point is vacuum-evaaporated on a conductive substrate 1, for example, a substrate formed with an interface layer 2 of Al 2 O 3 by subjecting the surface to nitric acid treatment, whereby a charge transfer layer 3 is formed. Next, a charge generating layer 4 of the composition xAs 2 Se 3 -yAs 2 Te 3 (x:y is between 11W1/8) is evaporation deposited on the layer 3. The alloy of this composition range is of about 130W170°C in glass transition point and if the content of As 2 Te 3 is high, it has a large coefficient of absorption for long wavelengths, but since the specific resistance is lower to about 1/10 6 than that of As 2 Se 3 , the above-mentioned range composition is imployed. In addition, the above-described composition alloy is higher in hardness than As 2 Se 3 . In this way, the photoreceptor of superior heat resistance and print resistance power and good spectral sensitivity is obtained.