Charge transfer device

  • Inventors:
  • Assignees: Toshiba Corp
  • Publication Date: November 25, 1981
  • Publication Number: JP-S56152267-A

Abstract

PURPOSE:To prevent the leave of a signal charge and to improve transfer efficiency and the resolving power of picture quality by expanding the channel width at the location changing the transfer direction of the signal charge along the transfer direction. CONSTITUTION:In a charge transfer device arranged a read out register 19, a bottom gate 20, and gate electrodes 21a, 21b, channels 22a, 22b are formed on the surface of a semiconductor substrate or around the surface to transfer a signal charge from storage sections 21a, 21b to the read out section 19. The channels 22a, 22b are formed to expand the channel width along the transfer direction of the signal charge at the last stage of the transfer electrode section 20. In this way, the electric potential inclines to the transfer direction even when the length of the electrode at the final stage is long. Therefore, the leave of transfer will not exist and transfer efficiency will be improved.

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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5691485-AJuly 24, 1981Nec Kyushu LtdCcd image sensor

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Cited By (3)

    Publication numberPublication dateAssigneeTitle
    JP-S59225561-ADecember 18, 1984Toshiba CorpCharge coupled device
    JP-S6314467-AJanuary 21, 1988Sony CorpSolid-state imaging device
    US-6618088-B1September 09, 2003Nec Electronics CorporationCharge transfer device having three pixel rows arranged adjacently to each other