Plasma etching device

  • Inventors:
  • Assignees: Mitsubishi Electric Corp
  • Publication Date: September 01, 1981
  • Publication Number: JP-S56110235-A

Abstract

PURPOSE:To improve processing capacity by utilizing the empty weight fall of a wafer through inclination of a tubular body of a plasma etching device consisting of an etching standby chamber equipped with a stopper divided with a switching valve, an etching chamber, a discharge auxiliary chamber, etc. CONSTITUTION:A groove 55 holding the periphery of a semiconductor wafer 10 is provided on a tubular body 30 of a plasma etching device. This body is divided into an etching standby chamber 35, an etching chamber 36 and a discharge auxiliary chamber 37 so that they assume an inclined profile. Under this constitution, wafers are fed one by one to the standby chamber 35 by a wafer feed device 53 and for the rest of process, wafers, by their own dead weight, roll and drop and are sequentially received and transferred by means of a stopper 68-72. Then the processed wafers are recovered by a semiconductor wafer recovery device 62. Thus the processing capacity can be increased and the both sides of the semiconductor wafer 10 be etched simultaneously.

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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5421175-AFebruary 17, 1979Tokyo Ouka Kougiyou KkImprovement of plasma reaction processor

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Cited By (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5842235-AMarch 11, 1983Toshiba CorpSemiconductor dry-type etching device